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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12003 DESCRIPTION * Collector-Emitter Sustaining Voltage: VCEO(SUS) = 750V(Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEX VCEO(SUS) VEBO IC IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Emitter Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 1500 750 5 4 3 7 100 150 -65~150 UNIT V V V A A A W IE PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ12003 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 B 750 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.2A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 6 fT Current-Gain--Bandwidth Product IC= 0.1A; VCE= 5V; ftest=1.0MHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz 90 pF tf Fall Time IC= 3A , IB1= 1.2A; LB= 8H 0.5 1.0 s isc Websitewww.iscsemi.cn 2 |
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